Incize is your partner in semiconductor characterization and modeling for design of digital, analog/RF and harsh environment applications.
Substrate characterization, simulation and modelling for a very wide range of applications.
1/f, RTN and thermal (RF) noise measurements and modelling
Access to state-of-the-art equipment and experience in the field of radiation hardness measurements and modeling.
Incize is present at MAKS 2017 in Zhukovsky, Russia, from 18 to 21 July.
Incize is attending the Paris Space Week. We are excited to present and challenge our activities of RadHard testing and simulations during B2B meetings with major players in the space and aeronautics industries.
- S. Makovejev, B. Kazemi Esfeh, J.-P. Raskin, D. Flandre, V. Kilchytska, “Threshold Voltage Extraction Techniques and Temperature Effect in Context of Global Variability in UTBB MOSFETs”, European Solid-State Device Research Conference ESSDERC, Sep. 2013
- Makovejev, S., Kazemi Esfeh, B., Barral, V., Planes, N., Haond, M., Flandre, D., & Raskin, J.-P. (2014). Wide Frequency Band Assessment of 28 nm FDSOI Technology Platform for Analogue and RF Applications. Ultimate Integration on Silicon, ULIS.