Mostafa Emam (IEEE M’10, IEEE SM’16) received the B.Sc. degree in electronics and communication engineering from Ain Shams University, Cairo, Egypt, in 2001, the Diplôme d’Ingénieur degree in electronics and signal processing, and the M.Sc. degree in design of microelectronics circuits and systems, both from the Institute National Polytechnique (INP), Toulouse, France, in 2005. He received the Ph.D. degree in engineering sciences in the Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Electrical Engineering, Université catholique de Louvain (UCL), Louvain- la-Neuve, Belgium, in 2010. From 2006 to 2010, he was a researcher at UCL where he worked on wideband characterization and modeling of MOSFETs.
His research interests include the characterization and modeling of SOI devices in dc, RF, large-signal, and high- frequency noise, for harsh-environment applications and under mechanical-stress conditions as well as the design and simulation of RF SOI circuits.
Dr. Emam is IEEE Senior member, the author and co-author of more than 35 scientific articles and book chapters, a reviewer for several IEEE journals and since 2015 he is the technical chair of the SubVt division of the IEEE International S3S Conference.
Since 2011, he is the founder of Incize, a spin-off from UCL, providing an innovative characterization and modeling service for devices and materials in all fields of operation.
Sergej Makovejev, PhD (Senior Engineer)
Sergej Makovejev received his BSc degree in Computing Physics from Vilnius University, Lithuania in 2007. In 2008 he graduated from Newcastle University, UK with MSc in Microelectronics. In 2012 he received PhD from School of Electrical and Electronic Engineering at Newcastle University, UK.
Since July 2012 Sergej Makovejev has been with the Institute of Information and Communication Technologies, Electronics and Applied Mathematics ICTEAM at Université catholique de Louvain, Belgium.
His research interests are within experimental characterisation, simulation as well as modelling of advanced silicon devices. His scientific research focuses on wideband and thermal characterisation in silicon-on-insulator, FinFET and nanowire technologies.
Sergej Makovejev authored and co-authored a number of works published in peer-reviewed journals and presented at international conferences.
In July 2015, he joined Incize as Senior Engineer.
Ferran Ureña i Begara, PhD (Senior Research Scientist)
Ferran Ureña i Begara received the degree of Technical Engineering in Industrial Electronics from the Escola Universitària d’Enginyeria Tècnica Industrial de Barcelona, Universitat Politècnica de Catalunya, Barcelona, Spain, 1992. From 1993 till 2007, he joined the Institut Pere Barnils de Centelles, Barcelona, Spain, where he taught computing and electronics technology and he was also the manager of the computers and network system. In 2008 he received the M.Sc. degree in Microelectronics from the School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne, UK, and the M.Sc. degree in Micro and Nanoelectronics from the Escola Tècnica Superior d’Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, Spain, 2009. He obtained his Ph.D. degree in 2013 from the School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne, UK. During his Ph.D. he worked on the modelling and characterization of strain in silicon nanostructures by Raman spectroscopy and Atomic Force Microscopy (AFM).
In 2013, Dr. Ureña joined as a post-doc at the Institute of Information and Communication Technologies, Electronics and Applied Mathematics at the Université catholique de Louvain, Louvain-la-Neuve, Belgium where he was involved in the fabrication, analysis and characterization of phase transition materials and 2D materials by Raman spectroscopy, Scanning Electron Microscopy (SEM), and X-ray photoelectron spectroscopy (XPS).
His research interests include the modelling and characterization of intrinsic material properties at the micro and nanoscale by using optical and atomic spectroscopy techniques.
In January 2017, he joined Incize as Senior Research Scientist.
Enrique Ekoga (Junior Engineer)
Enrique Ekoga received his BSc in Electronics and automatic in 2012
and he graduated with MSc in Radio Frequency communication systems in 2014
from Science and technology University in Lille, France.
From April 2014 to September 2014 he was intern at STMicrolectronics in Tours, France.
He worked on the development of a tunable RF filter based on STMicroelectronics IPD technology.
From October 2014 to March 2016 he worked as an RF Test & Characterization
Engineer at DelfMEMS in Villeneuve d’Ascq, France. He was in charge of
the DC and RF characterization of RF MEMS.
From June 2016 to October 2016 he worked at Skense where he contributed to the development of
self-powered wireless sensor.
In January 2017, he joined Incize as Junior Engineer.
Catherine Marcin received her Bachelor degree in Political Science from the Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium in 2013. She specialized in Chinese studies.
In 2014, she studied International Relations at Zhejiang University, Hangzhou, China during one semester. She received the Master degree in International Relations from the Université catholique de Louvain in 2015.
In 2015, she received a professional education in international trade and business.
In November 2015, she joined Incize as Business Developer.
Marianne Renoz (Market Developer)
Marianne Renoz completed her Master’s degree in Translation from the Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium in 2013. She specialized in English and Chinese translation.
In 2014, she studied for a year at Shanghai International Studies University.
In 2015, she received the Master degree in East Asian Business from the University of Sheffield, United Kingdom.
In 2016, she completed a complementary diploma in business and management at ICHEC, Brussels, Belgium.
In January 2017, she joined Incize as Market Developer for South Korea and Japan.
Raphaël Valentin received the Ph.D. degree in micro and nanotechnologies from the Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Villeneuve d’Ascq, France, in 2008. His Ph.D. degree research was on the device simulation/modeling and measurement of the nano-scale Metallic Source/Drain Fully Depleted SOI transistors dedicated to high-frequency applications.
In 2008, he worked as R&D Engineer (Post Doc/CEA-LETI) at ST-Microelectronics in the Modeling Group. His main research interest concerned advanced radio frequency (up to 100 GHz) Compact Modeling of sub-65-nm SOI CMOS devices (CMOS065-SOI) dedicated to high speed/low power communications.
In 2011, to open up new horizons for his personal and professional development, he worked for 3 years as a Senior Device Engineer at Montage Technology in Shanghai, China.
In 2015, he founded XYTECH Consulting, a start-up company located at HongKong to provide passive oriented semiconductor device IPs and consulting services for the semiconductor and IC design industries.
He is (co) author of 14 international publications, a book chapter on nanoscale CMOS and 7 scientific reports for the European Commission. Based on these experiences, he acquired a broad and extensive expertise covering compact device models, electrical characterization, CAD, TCAD and programming areas. In 2017, he is the first inventor of 3 patents on high-performance and high area efficient passice devices.
Since 2015, he also works with Incize as an independent consultant on modeling techniques dedicated to active and passive devices.
Cesar Roda Neve, PhD (Expert consultant)
Cesar Roda Nevereceived the Industrial Engineer degree from the ICAI Universidad Pontificia de Comillas, Madrid, Spain, in 2000. In 2012, he received the Ph.D. degree in engineering sciences from the Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium.
From 2006 to 2012, he joined the Microwave Laboratory at the Université Catholique de Louvain (UCL), Louvain-la-Neuve, Belgium, where he worked on the characterization and application of Si-based substrates for RF integration, in particular the use of HR-Si, HRSOI, and trap-rich HR-SOI substrates, wide-band on-wafer characterization of advanced passive and active devices in silicon MOS technology, substrate crosstalk, on wafer temperature characterization, and substrate related non-linearities and parasitic effects. From 2013 to 2016, he has been with the 3D and Optical Technology group of IMEC, Leuven, Belgium. In 2016, he joined M3 Systems as a Project Manager, Wavre, Belgium.
His research interests are signal integrity, RF on-wafer characterization, new structures for high-frequency model extraction, power distribution networks, design and integration of RF passive devices with special attention to 3D stacking and packaging technologies.
Since 2015 he also works as an independent consultant on non-linear measurement techniques for substrate properties characterization.
Prof. Jean-Pierre Raskin (Chief Scientific Advisor)
Jean-Pierre RASKIN (IEEE M’97, IEEE SM’06, IEEE F’14) received the Industrial Engineer degree from the Institut Supérieur Industriel d’Arlon, Belgium, in 1993, and the M.S. and Ph.D. degrees in Applied Sciences from the Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium, in 1994 and 1997, respectively. From 1994 to 1997, he was a Research Engineer at the Microwave Laboratory, UCL, Belgium. He worked on the modeling, characterization and fabrication of MMIC’s in Silicon-on-Insulator (SOI) technology for low-power, low-voltage applications. In 1998, he joined the EECS Department of The University of Michigan, Ann Arbor, USA. He has been involved in the development and characterization of micromachining fabrication techniques for microwave and millimeter-wave circuits and microelectromechanical transducers/amplifiers working in harsh environments. In 2000, he joined the Microwave Laboratory of UCL, Louvain-la-Neuve, Belgium, as Associate Professor, and he has been a Full Professor since 2007. From September 2009 to September 2010, he was visiting professor at Newcastle University, Newcastle Upon Tyne, UK. Since 2014 he has been the head of the Electrical Engineering Department of UCL.
His research interests are the modeling, wideband characterization and fabrication of advanced SOI MOSFETs as well as micro and nanofabrication of MEMS / NEMS sensors and actuators, including the extraction of intrinsic material properties at nanometer scale.
He is IEEE Fellow, EuMA Associate Member and Material Research Society (MRS) Member. He is author or co-author of more than 500 scientific articles.
Prof. Denis Flandre (Scientific Advisor)
Denis FLANDRE (M’85–SM’03) received the Ms. degree in Electrical Engineering, the Ph.D. degree and the Research Habilitation from the Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium, in 1986, 1990 and 1999, respectively. His doctoral research was on the modelling of Silicon-on-Insulator (SOI) MOS devices for characterization and circuit simulation, his Post-doctoral thesis on a systematic and automated synthesis methodology for MOS analog circuits. Since 2001, he is full-time Professor at UCL.
He is currently involved in the research and development of SOI MOS devices, digital and analog circuits, as well as sensors and MEMS, for special applications, more specifically high-speed, low-voltage low-power, RF, biomedical, radiation-hardened and high-temperature electronics and microsystems. He has authored or co-authored more than 800 technical papers or conference contributions. He is co-inventor of 10 patents. He has organized or lectured many short courses on SOI technology, devices and circuits in universities, industrial companies and conferences. He has received several scientific prizes and best paper awards.
He has participated or coordinated numerous research projects funded by regional and European institutions. He has been a member of several EU Networks of Excellence on High-Temperature Electronics, SOI technology, Nanoelectronics and Micro-nano-technology.
Prof. Flandre is a co-founder of CISSOID S.A., a spin-off company of UCL founded in 2000, focusing on SOI and high-reliability integrated circuit design and products. He is an active member of the SOI Industry Consortium and of the EUROSOI network. He is an IEEE Senior member.
Dr. Rakesh Kumar (Business Advisor)
Rakesh Kumar is a Semiconductor Industry veteran, with much experience in Fabless IC, Leadership, Strategy, and Entrepreneurism.
Since 2001 he has been President and CEO of Technology Connexions Inc, a services company which provides management, business and technical ‘bridging the gaps’ consulting in advanced semiconductor technology and virtual operations areas to emerging fabless IC companies, to mid-size and large, Fortune 500 IC companies, as well as leading research organizations.
He is a Business and Technology Advisor at the Entrepreneurism Center at University of California, San Diego. He has been an Adjunct Professor at Yonsei University in South Korea. He is currently a Visiting Lecturer at UCSD teaching students Successful Entrepreneurship for Microsystems.
Dr. Kumar has authored the book “Fabless Semiconductor Implementation” which espouses successful entrepreneurship in the semiconductor industry, and is based on his experience with many emerging companies. The book summarizes the breadth of issues in the formation, and the operation cycle of fabless semiconductor companies
During 41 years in the semiconductor industry Dr. Kumar has been the VP & GM of the worldwide Silicon Technology Services business unit at Cadence Design Systems, and has held various technical and executive positions at Unisys and Motorola.
Dr. Kumar is a Life Fellow of the IEEE, and is the President of the IEEE Solid-State Circuits Society with approximately 10,000 members. He has been a Distinguished Lecturer for the IEEE Solid-State Circuits, and Electron Devices Societies.
He received his Ph.D. and M.S. degrees in Electrical Engineering from the University of Rochester in 1974 and 1971, and his B.Tech. in Electrical Engineering from the IIT Delhi in 1969. He received an Executive MBA from the University of California, San Diego in 1989.