Barend van Liempd Barend van Liempd received the B.Sc. and M.Sc. degree in electrical engineering at the Technische Universiteit Eindhoven, Eindhoven, The Netherlands, in 2009 and 2011, respectively, and the Ph.D. degree in 2017 at the Vrije Universiteit Brussel, Brussels, Belgium.
From 2011 to 2014, he was with IMEC, Heverlee, Belgium, working as an R&D Engineer on multi-standard radios. From 2014 to 2017, he was with IMEC and the Vrije Universiteit Brussel, Brussels, Belgium, as a Ph.D. Researcher, working on tunable, highly integrated front-end modules. Since 2017, he is with IMEC as a Senior Researcher, where his research interests are analog, mixed-signal and RF circuits.
He has authored or coauthored more than 20 papers in international journals and conferences. He holds a US patent and is an inventor on several international patent applications. He was the recipient of the 2015 NXP Prize at the European Microwave IC (EuMIC) conference.
Talk Abstract:

The floating-body transistors in RF SOI offers a wealth of opportunity for analog and RF design techniques. In this talk, several silicon-proven imec designs are highlighting the potential of this technology. A key application domain is the RF front-end, where frequency-flexible solutions would render classical fixed-frequency, costly resonator-based solutions redundant. We detail the design of several integrated RF cancelers, aimed towards disrupting the frequency-division duplexing 5G market, namely the electrical-balance duplexer (EBD). In addition, EBDs enable in-band full-duplex operation, as they allow transmit and receive at the same time and frequency, while providing leakage isolation from transmit to receive, using a single antenna. Furthermore, the complexity of dual-frequency isolation is highlighted, offering two possible solutions which are explored through two implemented prototype EBD-based front-ends, including one that is co-integrated with a tunable SAW filter. Finally, this talk will highlight tunable filter technology using N-path filters, and their co-integration with low-noise amplifiers.