Christine RAYNAUD Christine RAYNAUD received the Engineer degree in Electronics and the Ph.D degree from the National Polytechnic Institute of Grenoble, France, in 1984 and 1988, respectively. During her doctoral research at CEA-LETI, she has demonstrated the potential in high-frequency range of sub-micrometer MOS devices on high resistivity bulk substrate, by innovative HF characterization on silicon and modeling. In 1989, she joined CEA-LETI, where she worked on the electrical characterization and the modeling of Partially Depleted Silicon-On-Insulator (SOI) devices. From 1993 to 2000, her main research interests were oriented to the process integration, the device design and the optimization of advanced sub-micrometer SOI devices on ultra-thin SOI film (Fully Depleted SOI devices). She was a Technical Committee member of the IEEE International SOI Conference from 1998 to 2000. From 2001 to 2010, she has been a LETI assignee at STMicroelectronics where she had the responsibility of the 0.13µm and then 65nm Partially Depleted SOI CMOS process development for RF applications. Since 2011, she has been in charge of creating new partnerships between CEA-LETI and industrial companies. Since 2015, she is also responsible of the strategy and roadmap definition in the field of RF Technologies and Components. She is author and coauthor of about 100 international communications in the field of microwave and/or SOI devices, including invited papers at various international conferences.
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