|David L. Harame was with IBM from 1984 to 2014 were he worked on SiGe HBT technology, RFCMOS, and Design Enablement. He is best known for taking SiGe from a research topic to manufacturing. In 2005 he was awarded the IEEE Daniel E Noble Award “For the development of Manufacturable Silicon Germanium, HBT Bipolar and BiCMOS technologies.” He joined Globalfoundries in 2014 as the CTO for RF Development and Enablement. He is now on assignment in the GF Dresden Germany fab developing 12FDX and 22FDX RF/mmWave FDSOI technology. David is a GF Fellow and an IEEE Fellow.|
Silicon technologies have made great strides and are now a mainstream of most RF/mmWave applications. They are pervasive in all but the higher power applications. RF FDSOI is the most recent entrant in the RF/mmWave space. It has three primary attributes that make it ideal for these applications: 1) Simple process and low cost, 2) Low power with 0.4V logic libraries available, and 3) high RF/mmWave performance. The high RF/mmWave performance of the technology is due to the short gate length (~20nm), thin HiKMG oxide thickness (Tequiv 1.3nm), electrostatics of the FDSOI transistor architecture, and gate first planar technology which eases wiring for advanced CMOS. The FDSOI architecture has a back-gate connection which may be used to adjust the threshold voltage and operating point of the transistor. The back gate brings a unique feature to these RF/mmWave transistors which can be exploited in new circuit design architectures. Another important aspect of the FDSOI technology is the accuracy of the compact models. The accuracy of the compact models for RF/mmWave will be presented and discussed. For RF/mmWave technology circuit design a full range of RF/mmWave passives are required. The menu of passives consist of a combination of passives designed in the SOI layer and hybrid (silicon substrate area). The presence of a thick dielectric thick metal add on module is also important especially for the mmWave applications. And lastly the tool support for E&M simulations and the PDK for the technology is also important.
This workshop presentation will review the 22FDX technology from basic process and device architecture to circuit design to emphasize the unique characteristics of the 22nm FDSOI technology.