| Ionut RADU is Director of Advanced R&D at Soitec being responsible for research and development efforts in the field of advanced substrate technologies. Prior to being appointed to his current position, he held various technology management positions with responsibility in development of new substrate technologies for advanced electronic devices.
Dr. Radu obtained his B.S. in physics from University of Bucharest in 1999 and Ph.D (Dr. rer. nat.) in physics from Martin-Luther University Halle-Wittenberg in 2003. He has co-authored more than 70 papers in peer-reviewed journals, conference proceedings and reference handbooks and holds more than 40 patents in the field of semiconductor technologies. Dr. Radu is senior member of IEEE society and involved in Technical Program Committees of international conferences (ESSDERC, VLSI-TSA) and industrial forums (Semicon Europa).
Wafer substrates represent the foundation of most of the electronic devices. The silicon on insulator (SOI) substrates are engineered to add new functions for the devices and advanced CMOS circuits with increased performance and energy efficiency. The interaction between the substrate materials and the devices becomes critical for the performance of the final IC. In case of high frequency and RF applications, the substrate should provide maximum isolation and eliminate parasitic distortion in order to enhance the RF signal integrity. Strong interactions and co-optimization of substrate-devices and circuit design has allowed the RF IC ecosystem to respond to the increasing connectivity needs. The RF-SOI technology has been widely adopted and became standard technology for the fabrication of all advanced RF switches and passive devices. The tutorial will present the material physics behind the SOI fabrication and the material engineering techniques with impact on RF devices.