| Mostafa Emam (IEEE M’10, IEEE SM’16) received the B.Sc. degree in electronics and communication engineering from Ain Shams University, Cairo, Egypt, in 2001, the Diplôme d’Ingénieur degree in electronics and signal processing, and the M.Sc. degree in design of microelectronics circuits and systems, both from the Institute National Polytechnique (INP), Toulouse, France, in 2005. He received the Ph.D. degree in engineering sciences in the Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Electrical Engineering, Université catholique de Louvain (UCL), Louvain- la-Neuve, Belgium, in 2010. From 2006 to 2010, he was a researcher at UCL where he worked on wideband characterization and modeling of MOSFETs.
His research interests include the characterization and modeling of SOI devices in dc, RF, large-signal, and high- frequency noise, for harsh-environment applications and under mechanical-stress conditions as well as the design and simulation of RF SOI circuits.
Dr. Emam is IEEE Senior member, the author and co-author of more than 35 scientific articles and book chapters, a reviewer for several IEEE journals and since 2015 he is the technical chair of the SubVt division of the IEEE International S3S Conference.
Since 2011, he is the founder of Incize, a spin-off from UCL, providing an innovative characterization and modeling service for devices and materials in all fields of operation.