Incize offers 1/f, RTN and thermal (RF) noise measurements and modelling. We can measure and model thermal noise in Si and III-V devices in a frequency range from 1 GHz to 60 GHz. We perform extraction of an equivalent circuit and standard noise parameters for 4-, 3- or 2-parameter model. On-wafer measurements are performed using the state-of-the-art equipment that includes advanced probe stations, PNAs, noise sources and tuners.


Contact us to find out more: info at incize dot com

Related publications
  1. M. Emam, P. Sakalas, D. Vanhoenacker-Janvier, J.-P. Raskin, Tao Chuan Lim, and F. Danneville, “Thermal Noise in MOSFETs: Two or Three-Parameter Noise Model?”, IEEE Transactions on Electron Devices, vol. 57, no. 5, pp. 1088-1091, May 2010.